| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce contact resistance and improve operation reliability. <P>SOLUTION: The semiconductor device includes a first conductive type first MOS transistor 5 formed on a semiconductor substrate 10, a plurality of second conductive type second MOS transistor 6 formed on the semiconductor substrate 10, a first contact plug CP10-1 having a circular planar surface shape, and a second contact plug CP10-2 having an oval planar surface shape. The second contact plug CP10-2 is formed on the source or drain of any one 6-1 of the second MOS transistors 6. The first contact plug CP10-1 is formed on sources or drains in the remaining second MOS transistors 6-2 and the first MOS transistor 5. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
