GROWTH METHOD OF GaN-BASED COMPOUND SEMICONDUCTOR AND SUBSTRATE WITH GROWTH LAYER

摘要

PROBLEM TO BE SOLVED: To provide a growth method of a GaN-based compound semiconductor in which strain generated in a GaN-based compound semiconductor growth layer is reduced and a crystal growth layer can be readily separated from an Si substrate, without damaging the crystal growth layer, and a substrate with the growth layer.

SOLUTION: The growth method of the GaN-based compound semiconductor includes a process of growing a columnar crystal layer on the Si substrate, a process of growing an island-growth or mesh-growth buffer layer on the columnar crystal layer, and a process of growing a GaN-based compound crystal on the buffer layer.

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