NONVOLATILE MEMORY, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

摘要

Provided is nonvolatile memory (10) wherein a selective gate (SG) is formed below a silicon layer (14), which is to be a channel region formed between the source region (S) and the drain region (D) of a transistor, by having a gate insulating film (15) between the silicon layer and the selective gate, a floating gate (FG) is formed on a part above the silicon layer (14) with a gate insulating film (16) therebetween, and a control gate (CG) connected to the floating gate (FG) is provided.  The selective gate (SG) has one end overlapping the source region (S) with the gate insulating film (15) therebetween, and the floating gate (FG) has one end overlapping the drain region (D) with the gate insulating film (16) therebetween, and the other end separated from the source region (S) and overlapping the silicon layer (14) with the gate insulating film (16) therebetween.  Thus, the nonvolatile memory wherein performance thereof is not deteriorated even when the nonvolatile memory is formed on an insulating substrate having a low heat dissipating characteristic.