| 摘要 |
PURPOSE: The metal wiring of the semiconductor device and a method of formation thereof minimizes the hillock phenomenon of the copper layer. The property and reliability of the copper routing are improved. CONSTITUTION: The insulating layer(104) having the routing region on the semiconductor substrate(102) is formed. The barrier film(106) is formed in the surface of the routing region. The buffer layer is formed in the barrier film surface. The metal layer is buried within the routing region. The seed layer is allowed in between the buffer layer and metal layer.
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