| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in connection reliability between an electrode and a wire; and a method of manufacturing the semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device includes processes of: preparing a structure 1 including a semiconductor substrate 10, electrodes 14 formed on a first surface 11 of the semiconductor substrate 10, and an insulation film 16 formed on the first surface 11 and having openings 16a each located on a first part of the electrode 14; forming first metal layers 17 each extending from the surface of the first part of the electrode 14 to the surface of the insulation film 16; forming a resin layer 30 on first parts 19 of the first metal layers 17 located on the first parts of the electrodes 14 and on the insulation film 16 after the process of forming the first metal layers 17; forming resin projections 18 by removing at least second parts located on the first parts 19 of the first metal layers 17 of the resin layer 30 by leaving a first part of the resin layer 30; and forming second metal layers 20 electrically-connected to the electrodes 14 from the surfaces of the first metal layers 17 to the surfaces of the resin projections 18. <P>COPYRIGHT: (C)2010,JPO&INPIT |
