THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor array panel and a method for manufacturing the same are provided to prevent a semiconductor from being exposed to moisture, external ions, and oxygen by successively depositing a semiconductor and a semiconductor protective film. CONSTITUTION: A gate electrode is formed on a substrate(S10). A gate insulating film is formed on the gate electrode(S20). A semiconductor is deposited on the gate insulating film(S30). An insulating film is deposited on the semiconductor(S40). A semiconductor layer and a pre-protective film for the semiconductor are formed using one mask(S50). A first opening and a second opening are formed in the pre-protective film for the semiconductor to form a semiconductor protective film(S60). A source electrode and a drain electrode are formed on the semiconductor protective film(S80).