| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which easily supplies oxygen to an oxide semiconductor layer and can recover a favorable transistor characteristic, and a display device equipped with the thin-film transistor. SOLUTION: In a source electrode 25S and a drain electrode 25D of a TFT 20, there are formed openings 27 for exposing an oxide semiconductor layer 23. When carrying out oxygen annealing after forming the TFT 20, it is easy to supply the oxygen to the oxide semiconductor layer 23 from the openings 27, and the favorable transistor characteristic is recovered. Moreover, the source electrode 25S and the drain electrode 25D may be divided in the channel width direction by a groove from which the oxide semiconductor layer 23 is exposed. Alternatively, there may be arranged a protruding region where the oxide semiconductor layer 23 is exposed from an edge of the source electrode 25S or the drain electrode 25D along a side facing a side lapped with a channel protective layer 24 of the source electrode 25S or the drain electrode 25D. COPYRIGHT: (C)2010,JPO&INPIT |
