| 摘要 |
<p>PURPOSE: A backside-illuminated image sensor and a method for manufacturing the same are provided to prevent a cross-talk phenomenon by securing the low transmittance of a color filter with long wavelength, compared to a color filter with short wavelength. CONSTITUTION: A substrate(30) includes a plurality of pixel regions. Light is income on one surface of the substrate. A photoelectric transform part is formed in the substrate. A plurality of wirings and interlayer insulating films(40) are formed on the other side of the substrate. A plurality of color filters is formed in positions corresponding to the pixel region of the substrate. A plurality of micro-lenses is formed on each color filter.</p> |
