发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer 4b consisting of a quantum well active layer on a semiconductor substrate 1; a 2nd step of forming a first dielectric film 10 on a first portion of the surface of the semiconductor layers 2 to 9; a 3rd step of forming a second dielectric film 12 made of the same material as that of the first dielectric film 10 and having a density lower than that of the first dielectric film 10 on a second portion of the surface of the semiconductor layers 2 to 9; and a 4th step of heat-treating a multilayer body containing the semiconductor layers 2 to 9, the first dielectric film 10, and the second dielectric film 12 to disorder the quantum well layer below the second dielectric film 12.
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申请公布号 |
US7777216(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20100683090 |
申请日期 |
2010.01.06 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YAMADA YUMI |
分类号 |
H01L29/06;H01S5/16;H01S5/20;H01S5/343 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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