| 摘要 |
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming a protection layer by transforming a portion of a sidewall of the hard mask pattern, forming a trench by etching the substrate using the hard mask pattern and the protection layer as an etch barrier, forming an isolation layer by filling the trench with an insulation material, removing the hard mask pattern, and performing a cleaning process. By forming the protection layer, it is possible to prevent the isolation layer from being lost during the removing of the hard mask pattern and the cleaning process and thus prevent generation of a moat.
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