| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To shorten the time to detect fail bits by identifying the fail bit areas at high speed in the memory cell array of a NAND flash memory. <P>SOLUTION: The semiconductor memory has a function to divide a page in the memory cell array into a plurality of e segments and to check the presence of fail bits for each segment in block. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
