| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high field effect mobility and a manufacturing method therefor. SOLUTION: The semiconductor device includes a recess having a side area and a bottom area, a gate electrode having an upper area excluding the recess, a gate insulation film that is formed to cover the gate electrode, a first semiconductor film that has a channel formation area on the gate insulation film, a source area and a drain area on the first semiconductor film, and a source electrode and a drain electrode on the source area and the drain area. The thicknesses of the gate insulation film and the first semiconductor film stacked on the side area of the recess are smaller than those of the gate insulation film and the first semiconductor film stacked on the upper area of the gate electrode. This invention also relates to the manufacturing method therefor. COPYRIGHT: (C)2010,JPO&INPIT |
