发明名称 NON VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: A non-volatile memory device and an operation method thereof are provided to set an optimized program initial voltage in a program operation for a second page by using the program result for a first page. CONSTITUTION: Latch units(1422, 1432, 1442) store program object data or erase object data. A one bit pass decision unit(1490) decides a program object cell which is programmed with verification voltage by grounding or floating a second verification signal terminal according to the data set in a second node of the latch units or the data applied to a detection node. The one bit pass decision unit includes first and second switching components connected in parallel between the ground terminal and the second verification signal terminal.
申请公布号 KR20100089504(A) 申请公布日期 2010.08.12
申请号 KR20090008792 申请日期 2009.02.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LIM, KYU HEE;PARK, SEONG JE;HAN, JUNG CHUL
分类号 G11C16/06;G11C16/34 主分类号 G11C16/06
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