发明名称 |
NON VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF |
摘要 |
PURPOSE: A non-volatile memory device and an operation method thereof are provided to set an optimized program initial voltage in a program operation for a second page by using the program result for a first page. CONSTITUTION: Latch units(1422, 1432, 1442) store program object data or erase object data. A one bit pass decision unit(1490) decides a program object cell which is programmed with verification voltage by grounding or floating a second verification signal terminal according to the data set in a second node of the latch units or the data applied to a detection node. The one bit pass decision unit includes first and second switching components connected in parallel between the ground terminal and the second verification signal terminal.
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申请公布号 |
KR20100089504(A) |
申请公布日期 |
2010.08.12 |
申请号 |
KR20090008792 |
申请日期 |
2009.02.04 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM, KYU HEE;PARK, SEONG JE;HAN, JUNG CHUL |
分类号 |
G11C16/06;G11C16/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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