MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To facilitate removal of a film to diffuse metal atoms inside a gate insulating film. Ž<P>SOLUTION: A manufacturing method for a semiconductor device includes: a step of forming a base film on a semiconductor substrate; a step of forming a gate insulating film on the base film; a step of forming a metal film on the gate insulating film; a step of subjecting the semiconductor substrate, the base film, the gate insulating film, and the metal film to heat treatment in an atmosphere of at least either one of nitrogen gas and inert gas; a step of removing the metal film remaining on the gate insulating film; and a step of forming a gate electrode film on the gate insulating film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž