| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MEMS sensor manufacturable without using a SOI substrate and requiring no separating layer. <P>SOLUTION: A recessed part 4 is formed at a silicon substrate 2, and fixed electrodes 5 and movable electrodes 6 are disposed in the recessed part 4. The fixed electrodes 5 and the movable electrodes 6 are formed of tungsten, but not silicon which is a material of the silicon substrate 2, and not formed by patterning the silicon substrate 2. For this reason, the silicon substrate 2 does not need to have high conductivity. As a result, an acceleration sensor 1 can be manufactured using the low-conductivity silicon substrate 2 without using the SOI substrate provided with a high-conductivity silicon layer. Since the silicon substrate 2 has no high conductivity, an area in which the fixed electrodes 5 and the movable electrodes 6 are formed does not need to be separated by insulation from surroundings thereof, thus requiring no separating layer for separation by insulation. <P>COPYRIGHT: (C)2010,JPO&INPIT |
