发明名称 PROBE DEVICE AND PROBE REGENERATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To process a probe by avoiding inadvertent damage on a sample and reducing scattering and adhesion as much as possible of sputtering particles of heavy metal which are constituents of the probe and a sample stage. Ž<P>SOLUTION: In a probe device having an ion beam system for irradiating an ion beam, and a probe control device for driving the probe arranged in a vacuum sample chamber, a zone for processing the probe with ion beams is arranged in the sample chamber, and sputter particles of the probe and ion beams passing through in the vicinity of the probe are captured in the zone. The probe device reduces adverse effect on the sample caused by sputter particles generated by ion beam irradiation to the probe, debris of the probe, and the ion beams passing through the vicinity of the probe. Thus, a probe shape is reproduced in the sample chamber, and the probe is continuously used for a long period. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010177063(A) 申请公布日期 2010.08.12
申请号 JP20090018953 申请日期 2009.01.30
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 UMEMURA KAORU;ISHIGURO KOJI;KANEOKA NORIYUKI;KAGEYAMA AKIRA
分类号 H01J37/317;G01R31/28;G01R31/302;H01L21/66 主分类号 H01J37/317
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