| 摘要 |
PURPOSE: A semiconductor device and method for fabricating the same are provided to embody the semiconductor device of the fine size using three dimensional structures. CONSTITUTION: The first insulation layer is formed on the first semiconductor substrate(100). The first micro-electronic device(110) has the wiring layer consisting of the refractory metal material. The second semiconductor substrate(200) is boned on the first insulation layer. The second insulation layer is formed on the second semiconductor substrate. The second micro-electronic device(210) is electrically connected to the first micro-electronic device. The first micro-electronic device the memory cell element(10) of the columnar structure of storing data. The second micro-electronic device is the logic device controlling the memory cell element. |
