发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of suppressing occurrence of electric crosstalk between a semiconductor light emitting element and a semiconductor light detecting element. <P>SOLUTION: An insulating layer 20 and a metal layer 30 are interposed between the semiconductor laser element 40 and semiconductor light detecting element 10. The insulating layer 20 is formed by oxidizing Al of high concentration contained in an AlAs layer formed on a p-type contact layer 13 of the semiconductor light detecting element 10, and stuck on the semiconductor laser element 40 with the metal layer 30. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010177649(A) |
申请公布日期 |
2010.08.12 |
申请号 |
JP20090021941 |
申请日期 |
2009.02.02 |
申请人 |
SONY CORP |
发明人 |
SHIROKISHI NAOTERU;MASUI TAKESHI;KODA RINTARO;ARAKIDA TAKAHIRO |
分类号 |
H01S5/0683;H01L31/10;H01S5/183;H01S5/323 |
主分类号 |
H01S5/0683 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|