THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS
摘要
A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C, and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.
申请公布号
WO2010054173(A3)
申请公布日期
2010.08.12
申请号
WO2009US63519
申请日期
2009.11.06
申请人
UNITED SOLAR OVONIC LLC;YAN, BAOJIE;XU, XIXIANG;YUE, GUOZHEN;GUHA, SUBHENDU;YANG, CHI
发明人
YAN, BAOJIE;XU, XIXIANG;YUE, GUOZHEN;GUHA, SUBHENDU;YANG, CHI