Switching arrangement, has switch element for closing N-channel metal oxide semiconductor series transistor during occurrence of reverse polarity, and bootstrap capacitor increasing gate potential of high-side switch

摘要

The arrangement has a switching bridge comprising a bridge section that consists of a low-side switch (T2, T4) and a high-side switch (T1, T3). A bootstrap capacitor (C1, C2) increases gate potential of the high-side switch, and an N-channel metal oxide semiconductor (NMOS) series transistor (T5) connects the switching bridge with a positive potential terminal. The bootstrap capacitor generates potential for controlling the NMOS series transistor. A switch element closes the NMOS series transistor during occurrence of reverse polarity and is designed as a bipolar transistor (T9).