发明名称 SEMICONDUCTOR MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To substantially suppress the performance deterioration by heat generation of elements by suppressing the thermal interference between the elements mounted. <P>SOLUTION: An IGBT 11 and diodes 21, 22 are mounted on a lead frame 31. The diodes 21, 22 are disposed side by side on the right side of the lead frame in up and down directions in Fig.1(a); and the IGBT 11 is disposed on the left side thereof. A slit 315 is provided in the vicinity of the middle point between the IGBT 11 and the diodes 21, 22 in the lead frame 31. The slit 315 is formed in a vertically long shape so as to block straight lines connecting the diodes 21, 22 and the IGBT 11. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010177619(A) 申请公布日期 2010.08.12
申请号 JP20090021445 申请日期 2009.02.02
申请人 SANKEN ELECTRIC CO LTD 发明人 SATA HIROSHI;MURATA JUNKO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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