| 摘要 |
Disclosed is a metal-semiconductor-metal phototransistor formed by a pair of closely spaced, thin metal films in rectifying contact with the surface of a lightly doped p-type indium arsenide substrate. The spacing between the metal films is substantially less than the diffusion length of a minority carrier in the indium arsenide at the operating temperature, which is on the order of -78 DEG C. One metal film may be considered the collector region, the semiconductor material the base region, and the other metal film the emitter region. When the transistor is biased like an NPN transistor, the collector current is varied in proportion to the radiation striking the base region generally in the same manner as a photodiode, but the current modulation is many times that produced by a photodiode for a given radiation level.
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