| 摘要 |
PURPOSE: A manufacturing method of a gate pattern for a nonvolatile memory device is provided to prevent phenomenon that a sidewall profile of the gate pattern is damaged by protecting a sidewall of a gate pattern in an etching process of a dielectric film through a protective film. CONSTITUTION: An element isolation film(107) is formed on an element isolation region(B). A turner insulating layer(103) and a first conductive film(105) are formed on the top of the active area(A). A dielectric film(109) is formed on the top of the element isolation film and on the surface of the first conductive film. A second conductive film(111) and a gate hard mask pattern(113a) are laminated on the top of the dielectric film. A protective film is formed on the top of the second conductive film, the dielectric film and the first conductive film.
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