| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a tandem type thin film solar cell without breakage of a pn junction of a lower cell. <P>SOLUTION: The manufacturing method of the tandem type thin film solar cell 100 including a plurality of photoelectric conversion units stacked on a substrate 10, includes a first electrode layer film formation process of forming a first electrode layer of a photoelectric conversion unit, a precursor layer film formation process of forming a plurality of semiconductor precursor layers on the formed first electrode layer, a second electrode layer film formation process of forming a second electrode layer on the formed semiconductor precursor layers, and a precursor layer diffusion process of producing a crystal of a semiconductor by heating semiconductor precursor layers of a plurality of photoelectric conversion units each having a semiconductor precursor layer formed between a first electrode layer and a second electrode layer after stacking the photoelectric conversion units. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
