| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase the lower power property and operating speed of a semiconductor using a germanium layer which is formed on an upper insulating layer after forming a lower insulating layer. CONSTITUTION: A bonding layer(110) and an insulating layer(120) are formed on a polymer substrate(100). A germanium layer(130) is formed on the insulating layer. An oxide film(140), a gate electrode(150), and a hard mask layer(160) are formed successively on the germanium layer. A photosensitive pattern is formed through an exposure and a development process using a gate pattern mask. The hard mask layer, a gate electrode, and an oxide film are etched to form a gate pattern by using the photosensitive pattern as a mask.
|
