| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of electrically controlling light receiving sensitivity of a long wavelength band. <P>SOLUTION: An imaging portion 10A uses one surface of a p-type Si substrate as an imaging surface. Then, the imaging portion 10A has a plurality of pixels 10 each of which contains a first n-type impurity layer formed near the imaging surface of the p-type Si substrate, is generated in the p-type Si substrate by photoelectric conversion, and outputs a pixel signal showing electric charges accumulated in the first n-type impurity layer. In addition, the imaging portion 10A has a second impurity layer at a position deeper from the imaging surface rather than the first n-type impurity layer. A collection range control means 51 of a timing generator 50 controls a collection range of the electric charges generated by the photoelectric conversion in the p-type Si substrate by controlling control voltage Vsb to be provided in the second n-type impurity layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
