| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel-type magnetic detecting element which, compared especially with such mode as a Ta layer is inserted in a free magnetic layer, reduces a gap length (GL) between upper and lower shield layers and raises a resistance change rate (ΔR/R). <P>SOLUTION: In a free magnetic layer 6, an enhance layer 12, a first soft magnetic layer 13, a non-magnetic metal layer 14, and a second soft magnetic layer 15 are stacked in this order upwardly on an insulating barrier wall layer 5 of, for example, Mg-Ti-O. The enhance layer 12 is formed from, for example, Co-Fe, the first soft magnetic layer 13 and the second soft magnetic layer 15 are formed from, for example, Ni-Fe, and the non-magnetic metal layer 14 is formed from, for example, Ti. A total film thickness T5 available by adding an average film thickness of the enhance layer 12 and the average film thickness of the first soft magnetic layer 13 together comes to be 19-28Å. Thus, a resistance change rate (ΔR/R) which is more stable and higher than before is obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
