| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection method determining presence of a defect of a trench gate electrode in a semiconductor device including a peripheral voltage-resistant region making a circuit of the outside of an element region. SOLUTION: The breakdown voltage of the element region is set lower than the breakdown voltage (a breakdown voltage line 29) of the peripheral voltage-resistant region by applying a negative voltage to the trench gate electrode, and the breakdown voltage of the element region is measured. The gradient of a breakdown voltage line 28 when a defect is present in the trench gate electrode is larger than that of a breakdown voltage line 27 when a defect is absent in the trench gate electrode. Thus, when the negative voltage applied to the trench gate is equal, the breakdown voltage of the element region when a defect is present in the trench gate electrode is measured to be lower than that when a defect is absent in the trench gate electrode. COPYRIGHT: (C)2010,JPO&INPIT
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