| 摘要 |
A layer (2) of ductile solder material e.g. indium, tin-lead is deposited on a silicon substrate (1). A connection mechanism is developed by stamping the ductile solder material by an etched die with desired forms of punches or shapes, where the depths between the shapes are identical or different. A residual material between the shapes is etched after etching a fine layer of ductile layer both on the shapes and between the shapes. |
