发明名称 Apparatus for producing polycrystalline silicon
摘要 <p>Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm 3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.</p>
申请公布号 EP1719736(B1) 申请公布日期 2010.08.11
申请号 EP20060016763 申请日期 2001.05.09
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU, SATORU;ODA, HIROYUKI
分类号 C01B33/02;B01J4/00;B01J10/00;B01J19/24;C01B33/027;C01B33/03;C01B33/035 主分类号 C01B33/02
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