| 摘要 |
A mixing box 1 comprises a stirring chamber 2 in which two gas-introduction pipes 5, 6 for introducing gases are arranged in such a manner that the gas-introduction inlets 5a, 6a thereof are opposed to one another and a diffusion chamber 3 for diffusing a gas mixture, wherein a partition plate 4 having a specific shape is positioned between the stirring chamber and the diffusion chamber in such a manner that the volume of the diffusion chamber is larger than that of the stirring chamber, wherein a gas-supply opening 7 is arranged, on the partition plate, at a desired position on the lower side of the direction perpendicular to the straight line connecting the two gas-introduction inlets, the box being able to uniformly admix gases having different masses and having a simple structure. The partition plate has a shape of a curve of second degree, which is convex with respect to the bottom of the mixing box. The present invention also relates to a thin film-manufacturing system equipped with the mixing box 1 and a method for preparing a film using a film-forming gas, which is uniformly admixed together in the mixing box. <??>The present invention also relates to a thin film-manufacturing system, which has a simple structure and can be manufactured at a low cost and which also permits the inhibition of the generation of any turbulent flow, convection current and heat convection and the formation of a uniform gas stream of a mixed gas, wherein a stage 53 for placing a substrate thereon is disposed within the vacuum reactor 2 and a gas head 57 for supplying the film-forming gas to the central area on the top face of the vacuum reactor 2 is arranged in such a manner that the head is opposed to the stage 53. A cylindrical sleeve member 61 having a desired length is disposed while it comes in close contact with the side wall of the stage 53 to thus surround the periphery of the stage and the height of the stage can be established at the position at which the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of the first space, in such a manner that an exhaust gas is isotropically discharged from a first space formed by the gas head and the upper face of the stage without causing any convection current therein through the interstice between the sleeve member and the inner wall surface constituting the reactor. <IMAGE> |
