发明名称 SILICON-BASED RF SYSTEM AND METHOD OF MANUFACTURING THE SAME
摘要 A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
申请公布号 US2010197064(A1) 申请公布日期 2010.08.05
申请号 US20100759648 申请日期 2010.04.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK YUN-KWON;KWON SANG-WOOK;KIM DUCK-HWAN;KIM JONG-SEOK;CHOA SUNG-HOON;SONG IN-SANG
分类号 H01L21/50 主分类号 H01L21/50
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