发明名称 |
SILICON-BASED RF SYSTEM AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
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申请公布号 |
US2010197064(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100759648 |
申请日期 |
2010.04.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YUN-KWON;KWON SANG-WOOK;KIM DUCK-HWAN;KIM JONG-SEOK;CHOA SUNG-HOON;SONG IN-SANG |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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