| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device of a back irradiation type, which solves problem points of a smart cut method due to foreign matter, without depending on an SOI (Silicon On Insulator) substrate. <P>SOLUTION: The method for manufacturing the solid-state image pick-up device includes the steps of: forming a silicon epitaxial growth layer 12 on a silicon substrate 11; forming a photoelectric conversion portions 21, transfer gates 23, and a peripheral circuit portion (not shown in the figure) in and/or on the silicon epitaxial growth layer 12, and further forming a wiring layer 31 on the silicon epitaxial growth layer 12; forming a split layer 13 in the silicon substrate 11 at a side of the silicon epitaxial growth layer 12; forming a support substrate 14 on the wiring layer 31; and peeling the silicon substrate 11 from the split layer 13 so as to leave a silicon layer 15 formed of a part of the silicon substrate 11 at a side of the support substrate 14. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
