BIT LINE VOLTAGE CONTROL IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY
摘要
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT- MRAM) and associated read operations are disclosed. A bit cell includes a magnetic tunnel junction (MTJ) and a word line transistor, the bit cell being coupled to a bit line and a source line. A clamping circuit is coupled to the bit line and is configured to clamp the bit line voltage to a desired voltage level during a read operation of the STT- MRAM to prevent the bit line voltage from exceeding the desired voltage level. The desired voltage level is less than a write voltage threshold associated with a write operation of the STT-MRAM.
申请公布号
WO2010088441(A1)
申请公布日期
2010.08.05
申请号
WO2010US22474
申请日期
2010.01.29
申请人
QUALCOMM INCORPORATED;YOON, SEI, SEUNG;KANG, SEUNG, H.