| 摘要 |
The present invention relates to a semiconductor device, and more precisely to an 1-transisotr type DRAM cell implemented using bulk silicon, a DRAM device and a DRAM comprising thereof and a driving method thereof and a manufacturing method thereof. The driving method of an 1-transistor type DRAM comprises: a data hold process biasing a word line at a negative voltage level and biasing a sensing line and a bit line at a first constant voltage level; a data purging process resetting data by biasing the word line at a second constant voltage level and biasing the sensing line and the bit line at the first constant voltage level; and a data write process allowing a write current to be flowed from the bit line to a floating body by rasing the bit line to the second constant voltage level and raising the sensing line to the half second constant voltage level, while maintaining the bias of the word line at the second constant voltage level.
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