| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sample processing device capable of certainly preventing the unnecessary deposit caused by an unnecessary difference in level or redeposition from being produced on the processing cross section of a sample. Ž<P>SOLUTION: In the sample processing device equipped with a sample stand 3a on which the sample 1 is placed, the shield plate 2 arranged in opposed relation to the sample stand 3a so as to hold the sample 1 placed on the sample stand 3a and the ion beam source positioned above the shield plate 2 and constituted so as to irradiate the place 1a, which is exposed from the side edge part 2a of the shield plate 2 at the part of the sample 1 positioned on the leading end side of the sample stand 3a, with the ion beam 10 from the ion beam source, to process the sample 1, the sample stand 3a is constituted of a material of which the thermal expansibility is larger than that of the shield plate 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
