| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high performance thin film diode having fast turn-on characteristics and a small parasitic capacity. <P>SOLUTION: The thin film diode includes a first contact of a material having a first conductivity type, a second contact of a material having a second conductivity type arranged coplanarly with the first contact, a channel arranged between the first and second contacts, a gate arranged adjacent to the channel, and a voltage source electrically connected to the gate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
