ORGANIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To form a metal oxide film on the surface of a source-drain electrode without putting a damage into the surface of an organic gate insulation film and to restore a damaged layer after forming the metal oxide film on the source-drain electrode. SOLUTION: The organic semiconductor device includes: source-drain electrodes 12 and 13 that are formed apart from each other on a substrate 11 having insulation properties on its surface; metal oxide films 14 and 15 formed on the surface of the source-drain electrodes 12 and 13; an organic semiconductor layer 16 that is formed on the substrate 11 and covers the metal oxide films 14 and 15; a gate insulation film 17 formed on the organic semiconductor layer 16; and a gate electrode 18 formed on the gate insulation film 17. COPYRIGHT: (C)2010,JPO&INPIT