METHOD FOR PRODUCING Mn-DOPED GaN CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a GaN crystal where a doped quantity of Mn in an Mn-doped GaN crystal useful as a high resistance material is controlled. SOLUTION: The method for producing the Mn-doped GaN crystal includes: (a) a step to prepare a glowing vessel 50 where a GaN seed crystal substrate 52 is immersed in a mixed melt of Na and Ga added with powdery Mn; and (b) a step to make a pressurized nitrogen gas atmosphere in the glowing vessel 50 by introducing nitrogen gas after sealing and vacuumizing the glowing vessel 50 and to grow the Mn-doped GaN crystal on the GaN seed crystal substrate while heating a content in the glowing vessel 50 to a specified crystal growing temperature with stirring. In the producing method, the powdery Mn in the glowing vessel 50 is held in the glowing vessel 50 without scattering because of being added with the mixed melt of Na and Ga when sealing and vacuumizing the glowing vessel 50. COPYRIGHT: (C)2010,JPO&INPIT