发明名称 |
Method of heat treating silicon wafer |
摘要 |
In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.
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申请公布号 |
US2010197146(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100656232 |
申请日期 |
2010.01.21 |
申请人 |
COVALENT MATERIALS CORPORATION |
发明人 |
SENDA TAKESHI;ISOGAI HIROMICHI;TOYODA EIJI;MURAYAMA KUMIKO;ARAKI KOJI;AOKI TATSUHIKO;SUDO HARUO;IZUNOME KOJI;MAEDA SUSUMU;KASHIMA KAZUHIKO |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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