| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an electrode of a low resistance and can reduce the number of patterning processes, and to provide a method of manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device includes a step which forms a first metal layer on a semiconductor substrate with a diffusion layer formed thereon, a step which forms an insulating having an opening portion on the first metal layer, a step which forms a second metal layer on the first metal layer in the opening portion of the insulating layer, a step which removes the insulating layer, a step which covers on the exposed surface of the second metal layer with a third metal layer containing a metal of ionization tendency smaller than the second metal layer, and a step which forms an electrode wiring having the first, second, and third metal layers by removing the first metal layer with the third metal layer as a mask. COPYRIGHT: (C)2010,JPO&INPIT |
