发明名称
摘要 A method of making light emitting diodes comprising: preparing an transparent substrate (100) having a first surface and a second surface opposing the first surface; forming successively a first epitaxial layer (140), an active layer (160), and a second epitaxial layer (180) on the first surface of the transparent substrate; forming a first electrode (240) on the second epitaxial layer; forming a second electrode (250) on the first epitaxial layer; and forming a reflective layer (200) on the second surface of the transparent substrate; wherein a transparent conductive layer (220) comprising ITO (indium-tin-oxide) is formed between the second epitaxial layer (180) and the first electrode (240), and a first pad (260) comprising Au is formed on the first electrode (240), the first electrode includes one of Ni/Au, Pd/Au, Pd/Ni and Pt.
申请公布号 JP4516749(B2) 申请公布日期 2010.08.04
申请号 JP20030539082 申请日期 2002.10.21
申请人 发明人
分类号 H01L33/10;H01L33/32;H01L33/00;H01L33/02;H01L33/46 主分类号 H01L33/10
代理机构 代理人
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