发明名称 |
Ferroelectric thin films |
摘要 |
Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.
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申请公布号 |
US7768050(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070774793 |
申请日期 |
2007.07.09 |
申请人 |
THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA |
发明人 |
RAPPE ANDREW MARSHALL;SAI NA;KOLPAK ALEXIE MICHELLE |
分类号 |
H01L29/76;H01L21/00;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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