MUTI-LEVEL-CELL NON-VOLATILE MEMORY DEVICE OF 3-DIMENSIONAL STRUCTURE USING CHARGE TRAPPING REGION AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A multi-level-cell nonvolatile memory device with a 3D structure and a manufacturing method thereof are provided to sufficiently increase the area of a channel region by forming a recess part with a 3D structure on an active region inside a unit cell. CONSTITUTION: The depression of a reverse pyramid type is formed on an active region of a semiconductor substrate. Three source/drain regions(105a-105d) or more are formed on the semiconductor substrate outside the depression unit per unit cell. A tunneling insulation layer(110) is formed on the inner wall of the depression. A charge trap region is formed on the tunneling insulation layer inside the depression and stores charges. A blocking insulation layer is formed on the charge trap region. A common gate electrode is formed on the blocking insulation layer.