| 摘要 |
PURPOSE: A plasma processing device is provided to reduce particles by preventing the inner side of a cover from being etched due to the sputter of ions. CONSTITUTION: A gas activating device(60) converts a process gas into plasma and includes a vertical plasma generating box(64), an ICP(Inductively Coupled Plasma) electrode(66), and a frequency power source connected to the electrode. The plasma generation box is attached to the process container to correspond to the process region and shuts down the plasma generation region connected to the processing region. The ICP electrode is arranged outside the plasma generation box along the length direction of the plasma generation box and includes a space separated from the wall of the plasma generation box.
|
