SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a short with an adjacent bottom electrode by supporting the bottom electrode with a support structure. CONSTITUTION: Bottom electrodes(110a) of a cylindrical shape comprises a constant height and a flat upper side. The bottom electrodes are repeatedly arranged on the substrate. Support structures(120) are comprised between the bottom electrodes, are contacted with the part of an outer wall of the bottom electrodes, and supports the contacted bottom electrodes. A dielectric layer(122) is formed along the surface of the support structures and the bottom electrodes. A top electrode is formed on the dielectric layer.
申请公布号
KR20100086795(A)
申请公布日期
2010.08.02
申请号
KR20090006213
申请日期
2009.01.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, GIL SUB;PARK, WON MO;KIM, SEONG HO;YANG, DONG KWAN;SONG, HO JU