| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to remove an undercut profile pattern by performing a second exposure process on a defocus of the photoresist layer after a first exposure process. CONSTITUTION: A first exposure process(300) is performed on a wafer with a photoresist layer along a mask pattern. A monitoring process(302) is performed on the area executed with the first exposure process. A second exposure process(304) is performed on the defocused part differently to the focus of the first exposure process if the defocused part occurs. A development process(306) is performed.</p> |
