发明名称 REAR-INCIDENT PHOTODIODE ARRAY AND RADIATION DETECTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a rear-incident photodiode array capable of suppressing the occurrence of noise, while suppressing deterioration in the durability of semiconductor substrates due to the formation of modified regions. <P>SOLUTION: The photodiode array 1 includes: an n-type semiconductor substrate 3, including a front and rear surfaces 3a, 3b facing each other; a plurality of p-type semiconductor regions 5 that are disposed side by side at the rear surface 3b side of the semiconductor substrate 3, with each being constituted of a photodiode 13 by a p-n junction 11 with the semiconductor substrate 3; and an n-type semiconductor region 7, that is disposed between the adjacent p-type semiconductor regions 5 on the rear surface 3b side and allows the impurity concentration to be set higher than that of the semiconductor substrate 3. A modified region 50 is formed, without reaching the front surface 3a and the n-type semiconductor region 7 on the semiconductor substrate 3, by focusing the focusing point to a prescribed position between the front surface 3a and by having the n-type semiconductor region 7 irradiated with a laser beam. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010165913(A) 申请公布日期 2010.07.29
申请号 JP20090007677 申请日期 2009.01.16
申请人 HAMAMATSU PHOTONICS KK 发明人 TAGUCHI TOMOYA;YONEDA MASATATSU;MURAMATSU NORIYUKI;FUJII YOSHIMARO
分类号 H01L27/146;G01T1/20 主分类号 H01L27/146
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