HIGH QUALITY SEMICONDUCTOR MATERIAL

摘要

A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm-3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon- germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.