<p>Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.</p>
申请公布号
WO2009158138(A8)
申请公布日期
2010.07.29
申请号
WO2009US45801
申请日期
2009.06.01
申请人
3M INNOVATIVE PROPERTIES COMPANY;HAASE, MICHAEL, A.;ZHANG, JUN-YING;MILLER, THOMAS, J.
发明人
HAASE, MICHAEL, A.;ZHANG, JUN-YING;MILLER, THOMAS, J.